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2 article(s) from Franz, Mathias

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Mathias Franz,
Mahnaz Safian Jouzdani,
Lysann Kaßner,
Marcus Daniel,
Frank Stahr and
Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

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Figure 1: Schematic sketch of the scia Atol 200 processing tool.

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Figure 2: Schematic sketch of the structure of the precursor [Co₂(CO)₆HC≡CC₅H₁₁].

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Figure 3: Influence of deposition temperature on film growth rate of continuous CVD depositions. The film gro...

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Figure 4: Temperature dependence of inhibition time (red dots) and CVD growth rate (blue diamonds) extracted ...

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Figure 5: XPS measurements of the CVD film deposited at 150 °C.

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Figure 6: Growth per cycle of ALD processes with [Co₂(CO)₆HC≡CC₅H₁₁] precursor at various temperatures.

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Figure 7: Film thickness evolution measured by in line spectroscopic ellipsometry for a deposition process at...

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Figure 8: Influence of precursor pulse time on growth rate for depositions at 85 and 90 °C including a satura...

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Figure 9: Influence of purging time after the precursor pulse (purging time 1) and after the H₂ plasma pulse ...

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Figure 10: Influence of the H₂ plasma pulse length on film thickness with the corresponding thickness distribu...

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Figure 11: Thickness distribution of cobalt film on a 200 mm wafer after 1500 cycles at 85 °C with 2 s H₂ plas...

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Figure 12: Thickness distribution of cobalt film on a 200 mm wafer after 1500 cycles at 85 °C with 4 s H₂ plas...

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Figure 13: XPS results of a cobalt film deposited at 35 °C by ALD with [Co₂(CO)₆HC≡CC₅H₁₁] precursor.

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Figure 14: XPS measurements of a cobalt film deposited at 85 °C by ALD with [Co₂(CO)₆HC≡CC₅H₁₁] precursor.

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Full Research Paper

Published 15 Sep 2023

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Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

Mathias Franz,
Romy Junghans,
Paul Schmitt,
Adriana Szeghalmi and
Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

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Figure 1: Fabricated noble metal particles. (a–e): SEM images of wafer surface; (f–j): particle size distribu...

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Figure 2: SEM surface images after 90 cycles of Ir ALD. The inset shows the corresponding cross section.

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Figure 3: Microscope image of etched structures.

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Figure 4: SEM images of etched structures (with 50 mmol/L H₂O₂ and 1.73 mol/L HF for 10 min) using Au particl...

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Figure 5: SEM images of etched structures (with 145 mmol/L H₂O₂ and 1.73 mol/L HF for 10 min) using Au partic...

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Figure 6: Measured reflectance of Au wafers after 10 min of etching in HF (1.73 mol/L)/H₂O₂ solution.

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Figure 7: SEM images of etched structures (with 50 mmol/L H₂O₂ and 1.73 mol/L HF for 10 min) using Pd particl...

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Figure 8: SEM images of etched structures using Cu particles, etched for 10 min with 1.73 mol/L HF and 10 mmo...

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Figure 9: SEM images of etched structures (with 100 mmol/L H₂O₂ and 1.73 mol/L HF for 10 min) using Ir partic...

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Figure 10: Reflectance of fabricated 3D templates, etched with 50 mmol/L H₂O₂ and 1.73 mol/L HF for 10 min. Ad...

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Full Research Paper

Published 23 Sep 2020

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